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  Datasheet File OCR Text:
 SMD Type
NPN General Purpose Transistor 2PD602A
Transistors IC
SOT-23
+0.1 2.9-0.1 +0.1 0.4-0.1
Unit: mm
+0.1 2.4-0.1
1
2
+0.1 0.95-0.1 +0.1 1.9-0.1
Low voltage (max. 50 V).
0.55
High current (max. 500 mA)
+0.1 1.3-0.1
Features
0.4
3
+0.05 0.1-0.01
+0.1 0.97-0.1
1.Base 2.Emitter 3.collector
Absolute Maximum Ratings Ta = 25
Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current (DC) Peak collector current Peak base current Total power dissipation Tamb 25 ; * Storage temperature Junction temperature Operating ambient temperature Thermal resistance from junction to ambient * * Transistor mounted on an FR4 printed-circuit board. Symbol VCBO VCEO VEBO IC ICM IBM Ptot Tstg Tj Tamb Rth j-a Rating 60 50 5 500 1 200 250 -65 to +150 150 -65 to +150 500 K/W Unit V V V mA A mA mW
+0.1 0.38-0.1
0-0.1
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1
SMD Type
2PD602A
Electrical Characteristics Ta = 25
Parameter Collector cut-off current Emitter cut-off current DC current gain 2PD602AQ 2PD602AR 2PD602AS DC current gain Collector-emitter saturation voltage Collector capacitance Transition frequency 2PD602AQ 2PD602AR 2PD602AS * Pulse test: tp 300 is; a 0.02. fT IC = 50 mA; VCE = 10 V; f = 100 MHz * hFE VCEsat Cc IC = 500 mA; VCE = 10 V; * IC = 300 mA; IB = 30 mA; * IE = ie = 0; VCB = 10 V; f = 1 MHz hFE IC = 150 mA; VCE = 10 V; * Symbol ICBO IEBO Testconditons IE = 0; VCB = 60 V IE = 0; VCB = 60 V; Tj = 150 IC = 0; VEB = 4 V
Transistors IC
Min
Max 10 5 10
Unit nA iA nA
85 120 170
170 240 340
600 15 140 160 180
mV pF
MHz
Marking
Type Number hFE 2PD602AQ XQ 2PD602AR XR 2PD602AS XS
2
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